A NIMS research team has developed a magnetic tunnel junction (MTJ) featuring a tunnel barrier made of a high-entropy oxide ...

Their results pave the way for developing advanced electronic devices that rely on nonmagnetic materials. For the first time, ...

A research team has developed a device principle that can utilize "spin loss," which was previously thought of as a simple ...

Magnetization switching remains one of the central applications of spintronic devices.

Dr. Dong-Soo Han's research team at the Korea Institute of Science and Technology (KIST) Semiconductor Technology Research Center, in collaboration with the research teams of Prof. Jung-Il Hong at ...